MATS8AB Properties of semiconductors | ECTS Credits : 2 Duration : 21 hours | Semester : S8 | ||
Person(s) in charge: Christophe CANDOLFI, Associate Professor, christophe.candolfi@mines-nancy.univ-lorraine.fr | ||||
Keywords: semiconductors, doping, diode, transistor, optical properties | ||||
Prerequisites: Electrical and thermal properties of materials, Quantum mechanics, Statistical physics | ||||
General objective : Understand the underlying physics of semiconductors and the fundamentals of semiconductor devices (diode, transistor, light emitting diode, laser diode, solar cell) | ||||
Program and Contents: Semiconductors are ubiquitous in our everyday life and are at the root of our information technology. Controlling their electrical properties through doping enables combining these materials to obtain electronic devices found in integrated circuits. Their peculiar properties, halfway between metals and insulators, drive these materials as materials of choice for emitting or detecting electromagnetic waves. The purpose of this course is to understand how the transport properties of semiconductors can be tuned by impurity atoms and to learn the fundamentals of semiconductor devices such as diodes, transistor and optoelectronic devices (LED, laser diode and solar cell).
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Abilities: | ||||
Level | Description and operational verbs | |||
Know | The main semiconductors used nowadays in microelectronics – The influence of doping on the transport properties – The fundamentals of the main semiconductor devices | |||
Understand | The origin of the electronic band structure of semiconductors – The effect of doping on the physical properties of semiconductors – The connection between the transport properties of a device and its constituents | |||
Apply | Quantum and classical statistics to calculate the carrier concentration in semiconductors – The governing equations of semiconductor devices | |||
Analyze | The transport properties of doped and undoped semiconductors – The influence of doping elements on the physical characteristics of devices | |||
Summarize | The influence of doping in order to obtain appropriate physical properties for a given application | |||
Assess | The physical properties of semiconductors in order to choose the most suitable material to implement in an electronic device | |||
Assessment: | ||||
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