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A major technological challenge is the finding of a new material for the post-silicon CMOS era. Graphene exhibits the excellent properties of carbon nanotubes (CNT), while not suffering from placing and scalability problems. Pristine CNTs are known to be ballistic conductors even at room temperature and to withstand high current densities. Graphene nanoribbons are predicted to have similar properties and are thus interesting for all-graphene circuitry. However most strategies involve the growth of extended graphene 2D sheets and subsequent graphene nano-patterning that degrades considerably the electronic mobility of nanopatterned graphene.

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